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Q67040-S4650 Datasheet

  • Q67040-S4650

  • Low Loss DuoPack : IGBT in Trench and Fieldstop technology w...

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  • 14頁(yè)

  • INFINEON   INFINEON

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IHP10T120
Soft Switching Series
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
鈥?/div>
鈥?/div>
Short circuit withstand time 鈥?10碌s
Designed for :
- Soft Switching Applications
- Induction Heating
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in V
CE(sat)
- Very low
V
ce(sat)
Very soft, fast recovery anti-parallel EmCon
鈩?/div>
HE diode
Low EMI
Application specific optimisation of inverse diode
V
CE
1200V
I
C
10A
V
CE(sat),Tj=25擄C
1.7V
T
j,max
150擄C
Marking
H10T120
鈥?/div>
C
G
E
P-TO-220-3-1
(TO-220AB)
鈥?/div>
鈥?/div>
鈥?/div>
Type
IHP10T120
Package
TO-220-3-1
Ordering Code
Q67040-S4650
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25擄C
T
C
= 100擄C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
鈮?/div>
1200V,
T
j
鈮?/div>
150擄C
Diode forward current
T
C
= 25擄C
T
C
= 100擄C
Diode pulsed current,
t
p
limited by
T
jmax
, T
c
= 25擄C
Diode surge non repetitive current, t
p
limited by T
jmax
T
C
= 25擄C, t
p
= 10ms, sine halfwave
T
C
= 25擄C, t
p
鈮?/div>
2.5碌s, sine halfwave
T
C
= 100擄C, t
p
鈮?/div>
2.5碌s, sine halfwave
Gate-emitter voltage
Short circuit withstand time
1)
V
GE
= 15V,
V
CC
鈮?/div>
1200V,
T
j
鈮?/div>
150擄C
Power dissipation,
T
C
= 25擄C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
P
tot
T
j
T
stg
-
138
-40...+150
-55...+150
260
W
擄C
V
GE
t
SC
I
Fpuls
I
FSM
28
50
40
鹵20
10
V
碌s
I
F
11
7
16.5
A
I
Cpuls
-
Symbol
V
CE
I
C
16
10
24
24
Value
1200
Unit
V
A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2 Jun-04
Power Semiconductors

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