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Q67040-S4649 Datasheet

  • Q67040-S4649

  • HighSpeed 2-Technology with soft, fast recovery anti-paralle...

  • 14頁

  • INFINEON   INFINEON

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IKA03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
鈥?/div>
鈥?/div>
Designed for:
- TV 鈥?Horizontal Line Deflection
2
nd
generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Integrated anti-parallel diode
-
E
off
optimized for
I
C
=3A
G
C
E
P-TO220-3-31
(FullPAK)
P-TO220-3-34
(FullPAK)
鈥?/div>
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
IKA03N120H2
IKA03N120H2
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector peak current (V
GE
= 15V)
T
C
= 100擄C,
f
= 32kHz
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
鈮?/div>
1200V,
T
j
鈮?/div>
150擄C
Diode forward current
T
C
= 25擄C
T
C
= 100擄C
Gate-emitter voltage
Power dissipation
T
C
= 25擄C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
T
j
,
T
stg
-
-40...+150
260
擄C
V
GE
P
tot
I
F
9.6
3.9
鹵20
29
V
W
I
Cpuls
-
Symbol
V
CE
I
C
8.2
9
9
Value
1200
Unit
V
A
V
CE
1200V
1200V
I
C
3A
3A
E
off
0.15mJ
0.15mJ
T
j
150擄C
150擄C
Marking
Package
Ordering Code
Q67040-S4649
Q67040-S4655
K03H1202 P-TO-220-3-31
K03H1202 P-TO-220-3-34
Power Semiconductors
1
Mar-04, Rev. 2

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