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Q67040-S4628 Datasheet

  • Q67040-S4628

  • LightMOS Power Transistor

  • 15頁

  • INFINEON   INFINEON

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ILA03N60, ILP03N60
ILB03N60, ILD03N60
LightMOS Power Transistor
C
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
New high voltage technology designed for ZVS-switching in lamp
ballasts
IGBT with integrated reverse diode
4A current rating for reverse diode
Up to 10 times lower gate capacitance than MOSFET
Avalanche rated
150擄C operating temperature
FullPak isolates 2.5 kV AC (1 min.)
P-TO-220-3-1
(TO-220AB)
G
E
P-TO-220-3-31
(TO-220 FullPak)
P-TO-263-3-2 (D
2
-PAK)
(TO-263AB)
P-TO-252-3-1 (D-PAK)
(TO-252AA)
Type
ILA03N60
ILP03N60
ILB03N60
ILD03N60
Maximum Ratings
Parameter
V
CE
600V
600V
600V
600V
I
C
3.0A
3.0A
3.0A
3.0A
V
CE(sat),Tj=25擄C
2.9V
2.9V
2.9V
2.9V
T
j,max
150擄C
150擄C
150擄C
150擄C
Package
P-TO-220-3-31
P-TO-220-3-1
P-TO-263-3-2
P-TO-252-3-1
Value
ILA03N60
600
3
2.2
9
5.5
4
2.2
9
5.5
0.32
鹵30
1
1
16.5
Ordering Code
Q67040-S4626
Q67040-S4628
Q67040-S4627
Q67040-S4625
Symbol
V
CE
T
C
= 25擄C
T
C
= 100擄C
I
C
I
Cpuls
I
F
I
Fpuls
E
AS
V
GE
dv/dt
P
tot
T
stg
T
s
Others
4.5
3
Unit
V
A
Collector-emitter voltage
DC collector current
Pulsed collector current,
t
p
limited by
T
jmax
,
t
p
< 10 ms
Pulsed collector current,
t
p
limited by
T
jmax
Diode forward current
T
C
= 25擄C
T
C
= 100擄C
Diode pulsed current,
t
p
limited by
T
jmax
,
t
p
< 10 ms
Diode pulsed current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
C
=0.4A,
V
CE
=50V
Gate-emitter voltage
Reverse diode dv/dt
I
C
鈮?/div>
3A,
V
CE
鈮?/div>
450V,
T
jmax
鈮?/div>
150擄C
Power dissipation (T
C
= 25擄C)
Operating junction and storage temperature
Soldering temperature
for 10 s (according to JEDEC J-STA-020A)
4
2.5
mJ
V
V/ns
27
W
擄C
-55...+150
D-Pak
Others
255
220
Reverse diode of transistor is commutated with same device according to figure C. With application
relevant values
I
C
鈮?/div>
1.5A,
C
Snubber
= 1 nF and
R
G
鈮?/div>
50鈩? dv/dt of the reverse diode is within its specification.
1
Power Semiconductors
1
Rev. 1.2 Apr-04

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