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Q67040-S4505 Datasheet

  • Q67040-S4505

  • FAST IGBT IN NPT TECHNOLOGY

  • 12頁

  • INFINEON   INFINEON

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上傳產(chǎn)品規(guī)格書

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SGP02N60,
Fast IGBT in NPT-technology
鈥?/div>
75% lower
E
off
compared to previous generation
combined with low conduction losses
鈥?/div>
Short circuit withstand time 鈥?10
碌s
鈥?/div>
Designed for:
- Motor controls
- Inverter
鈥?/div>
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
SGB02N60
SGD02N60
C
G
E
P-TO-252-3-1 (D-PAK)
(TO-252AA)
P-TO-220-3-1
(TO-220AB)
P-TO-263-3-2 (D虜-PAK)
(TO-263AB)
鈥?/div>
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
Type
SGP02N60
SGB02N60
SGD02N60
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25擄C
T
C
= 100擄C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
鈮?/div>
600V,
T
j
鈮?/div>
150擄C
Gate-emitter voltage
Avalanche energy, single pulse
I
C
= 2 A,
V
CC
= 50 V,
R
GE
= 25
鈩?
start at
T
j
= 25擄C
Short circuit withstand time
Power dissipation
T
C
= 25擄C
Operating junction and storage temperature
T
j
,
T
stg
-55...+150
擄C
1)
V
CE
600V
I
C
2A
V
CE(sat)
2.2V
T
j
150擄C
Package
TO-220AB
TO-263AB
TO-252AA(DPAK)
Ordering Code
Q67040-S4504
Q67040-S4505
Q67041-A4707
Symbol
V
CE
I
C
Value
600
6.0
2.9
Unit
V
A
I
Cpul s
-
V
GE
E
AS
12
12
鹵20
13
V
mJ
t
SC
P
tot
10
30
碌s
W
V
GE
= 15V,
V
CC
鈮?/div>
600V,
T
j
鈮?/div>
150擄C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Jul-02

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