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Q62703-N208 Datasheet

  • Q62703-N208

  • EINFACHKOPPLER MIT TRANSISTORAUSGANG

  • 97.96KB

  • 3頁

  • ETC

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SFH610A/611A/615A/617A
5.3 kV TRIOS
廬
OPTOCOUPLER
HIGH RELIABILITY
FEATURES
鈥?High Current Transfer Ratios
at 10 mA: 40鈥?20%
at 1 mA: 60% typical (>13)
鈥?Low CTR Degradation
鈥?Good CTR Linearity Depending on Forward Current
鈥?Withstand Test Voltage, 5300 VACRMS
鈥?High Collector-Emitter Voltage, VCEO=70 V
鈥?Low Saturation Voltage
鈥?Fast Switching Times
鈥?Field-Effect Stable by TRIOS
(TRansparent IOn Shield)
鈥?Temperature Stable
鈥?Low Coupling Capacitance
鈥?End-Stackable, .100"(2.54 mm) Spacing
鈥?High Common-Mode Interference Immunity (Uncon-
nected Base)
鈥?Underwriters Lab File #52744
鈥?/div>
VDE 0884 Available with Option 1
鈥?SMD Option 鈥?See SFH6106/16/56 Data Sheet
DESCRIPTION
The SFH61XA features a high current transfer ratio, low
coupling capacitance and high isolation voltage. These
couplers have a GaAs infrared emitting diode emitter,
which is optically coupled to a silicon planar phototransis-
tor detector, and is incorporated in a plastic DIP-4
package.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm spacing.
Creepage and clearance distances of >8 mm are
achieved with option 6. This version complies with IEC 950
(DIN VDE 0805) for reinforced insulation up to an operation
voltage of 400 V
RMS
or DC.
Speci鏗乧ations subject to change.
Package Dimensions in Inches (mm)
2
1
Pin One I.D.
SFH610A
1
4
Emitter
3
Collector
.268 (6.81)
.255 (6.48)
Anode
Cathode
2
3
4
.190 (4.83)
.179 (4.55)
.045 (1.14)
.030 (.76)
.150 (3.81)
.130 (3.30)
.135 (3.43)
.115 (2.92)
4擄
Typ.
.022 (.56)
.018 (.46)
.040 (1.02)
.030 (.76 )
3擄鈥?擄
1.00 (2.54)
Typ.
10擄
Typ.
.305
(7.75)
.012 (.30)
.008 (.20)
SFH611A
Cathode
SFH615A/617A
4
Collector
3
Emitter
Anode
1
1
4
Collector
3
Emitter
Anode
2
Cathode
2
Maximum Ratings
Emitter
Reverse Voltage ............................................................................6 V
DC Forward Current ................................................................ 60 mA
Surge Forward Current (tP
鈮?/div>
10
碌
s) ............................................ 2.5 A
Total Power Dissipation .........................................................100 mW
Detector
Collector-Emitter Voltage.............................................................70 V
Emitter-Collector Voltage...............................................................7 V
Collector Current ......................................................................50 mA
Collector Current (tP
鈮?/div>
1 ms)....................................................100 mA
Total Power Dissipation .........................................................150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
part 2, Nov. 74 ......................................................... 5300 VAC
RMS
Creepage ................................................................................
鈮?/div>
7 mm
Clearance................................................................................
鈮?/div>
7 mm
Insulation Thickness between Emitter and Detector............
鈮?/div>
0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1.........................................
鈮?/div>
175
Isolation Resistance
V
IO
=500 V, T
A
=25
擄
C ..........................................................
鈮?/div>
10
12
鈩?/div>
V
IO
=500 V, T
A
=100
擄
C ........................................................
鈮?/div>
10
11
鈩?/div>
Storage Temperature Range .......................................鈥?5 to +150
擄
C
Ambient Temperature Range ......................................鈥?5 to +100
擄
C
Junction Temperature...............................................................100
擄
C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane
鈮?/div>
1.5 mm) ....................................260
擄
C
5鈥?

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