GaAs FET
CLY 10
_________________________________________________________________________________________________________
Datasheet
*
Power amplifier for mobile phones
*
For frequencies from 400 MHz to 2.5 GHz
*
Wide operating voltage range: 2.7 to 6 V
* P
OUT
at V
D
=3V, f=1.8GHz 28.5 dBm typ.
*
High efficiency better 55 %
ESD:
Electrostatic discharge
sensitive device,
observe handling precautions!
Type
Marking
Ordering code
(taped)
Q62702-L94
Pin Configuration
1
2
3
4
G
S
D
S
Package 1)
CLY 10
CLY 10
SOT 223
Maximum ratings
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current
Channel temperature
Storage temperature
Total power dissipation
(Ts < 80 擄C) 2)
Total power dissipation
(Ts < 110 擄C) 2)
Symbol
VDS
VDG
VGS
ID
TCh
Tstg
PtotDC
Values
9
12
-6
2.1
150
-55...+150
3.5
2.0
Unit
V
V
V
A
擄C
擄C
W
Thermal resistance
Channel - soldering point
2)
RthChS
鈮?0
K/W
1)
Dimensions see chapter Package Outlines
2) Ts is measured on the source lead to the PCB under load.
Siemens Aktiengesellschaft
pg. 1/7
17.12.96
HL EH PD 21