BFR 35AP
NPN Silicon RF Transistor
鈥?For low distortion broadband amplifiers and
oscillators up to 2GHz at collector currents from
0.5mA to 20mA
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFR 35AP
GEs
Q62702-F938
1=B
2=E
3=C
Package
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Symbol
Values
15
20
20
2.5
30
4
mW
280
150
- 65 ... + 150
- 65 ... + 150
鈮?/div>
365
擄C
mA
Unit
V
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
1)
T
S
鈮?/div>
48 擄C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
R
thJS
K/W
1)
T
S
is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-12-1996
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