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Q62702-F1572 Datasheet

  • Q62702-F1572

  • NPN Silicon RF Transistor (For low-noise, high-gain broadban...

  • 6頁

  • INFINEON   INFINEON

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BFS 481
NPN Silicon RF Transistor
鈥?For low-noise, high-gain broadband amplifier
at collector currents from 0.5 to 12 mA
鈥?/div>
f
T
= 8 GHz
F
= 1.4 dB at 900 MHz
鈥?Two (galvanic) internal isolated
Transistors in one package
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFS 481
RFs
Q62702-F1572
1/4 = B
2/5 = E
3/6 = C
Package
SOT-363
data below is of a single transistor
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Symbol
Values
12
20
20
2
20
2
mW
175
150
- 65 ... + 150
- 65 ... + 150
擄C
mA
Unit
V
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
T
S
鈮?/div>
83 擄C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
R
thJS
鈮?/div>
380
K/W
1)
T
S
is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-16-1996

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