BFR 280
NPN Silicon RF Transistor
鈥?For low noise, low-power amplifiers in mobile
communication systems (pager, cordless
telephone) at collector currents from 0.2mA to 8mA
鈥?/div>
f
T
= 7.5GHz
F
= 1.5dB at 900MHz
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFR 280
REs
Q62702-F1298
1=B
2=E
3=C
Package
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Symbol
Values
8
10
10
2
10
1.2
mW
80
150
- 65 ... + 150
- 65 ... + 150
鈮?/div>
425
擄C
mA
Unit
V
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
1)
T
S
鈮?/div>
115 擄C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
R
thJS
K/W
1)
T
S
is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-11-1996
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