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Q62702-F1189 Datasheet

  • Q62702-F1189

  • NPN Silicon RF Transistor (For low-noise, high-gain amplifie...

  • 18頁

  • INFINEON   INFINEON

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NPN Silicon RF Transistor
q
q
q
q
BFQ 82
For low-noise, high-gain amplifiers up to 2 GHz.
Linear broadband applications at collector currents
up to 40 mA.
Hermetically sealed ceramic package.
f
T
= 8 GHz
F
= 1.1 dB at 800 MHz
ESD: Electrostatic discharge
sensitive device, observe handling precautions!
Type
BFQ 82
Marking
82
Ordering Code
(tape and reel)
Q62702-F1189
Pin Configuration
1
2
3
4
B
E
C
E
Package
1)
Cerec-X
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage,
V
BE
= 0
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current,
f
鈮?/div>
10 MHz
Base current
Peak base current,
f
鈮?/div>
10 MHz
Total power dissipation,
T
S
鈮?/div>
95 藲C
3)
Junction temperature
Ambient temperature range
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - case
3)
1)
2)
Symbol
V
CE0
V
CES
V
CB0
V
EB0
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
A
T
stg
Values
12
20
20
2
80
80
10
10
500
175
鈥?65 鈥?+ 175
鈥?65 鈥?+ 175
Unit
V
mA
mW
藲C
R
th JA
R
th JS
鈮?/div>
鈮?/div>
240
160
K/W
For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm
脳
16.7 mm
脳
0.7 mm.
3)
T
S
is measured on the collector lead at the soldering point to the pcb.

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