MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by PZTA92T1/D
High Voltage Transistor
PNP Silicon
COLLECTOR 2,4
BASE
1
EMITTER 3
PZTA92T1
Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current
Total Power Dissipation up to TA = 25擄C(1)
Storage Temperature Range
Junction Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Value
鈥?300
鈥?00
鈥?5.0
鈥?500
1.5
鈥?65 to +150
150
Unit
Vdc
Vdc
Vdc
mAdc
Watts
擄C
擄C
SOT鈥?23 PACKAGE
PNP SILICON
HIGH VOLTAGE TRANSISTOR
SURFACE MOUNT
4
1
2
3
CASE 318E鈥?4, STYLE 1
TO鈥?61AA
DEVICE MARKING
P2D
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance from Junction to Ambient(1)
Symbol
R
胃JA
Max
83.3
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage (IC = 鈥?.0 mAdc, IB = 0)
Collector鈥揃ase Breakdown Voltage (IC = 鈥?00
碌A(chǔ)dc,
IE = 0)
Emitter鈥揃ase Breakdown Voltage (IE = 鈥?00
碌A(chǔ)dc,
IC = 0)
Collector鈥揃ase Cutoff Current (VCB = 鈥?200 Vdc, IE = 0)
Emitter鈥揃ase Cutoff Current (VBE = 鈥?3.0 Vdc, IC = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
鈥?300
鈥?300
鈥?5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?0.25
鈥?0.1
Vdc
Vdc
Vdc
碌A(chǔ)dc
碌A(chǔ)dc
ON CHARACTERISTICS
DC Current Gain(2)
(IC = 鈥?1.0 mAdc, VCE = 鈥?10 Vdc)
(IC = 鈥?0 mAdc, VCE = 鈥?10 Vdc)
(IC = 鈥?30 mAdc, VCE = 鈥?10 Vdc)
Saturation Voltages
(IC = 鈥?0 mAdc, IB = 鈥?.0 mAdc)
(IC = 鈥?0 mAdc, IB = 鈥?.0 mAdc)
hFE
25
40
25
VCE(sat)
VBE(sat)
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
鈥?0.5
鈥?0.9
鈥?/div>
DYNAMIC CHARACTERISTICS
Collector鈥揃ase Capacitance @ f = 1.0 MHz (VCB = 鈥?0 Vdc, IE = 0)
Current鈥揋ain 鈥?Bandwidth Product
(IC = 鈥?0 mAdc, VCE = 鈥?20 Vdc, f = 100 MHz)
Ccb
fT
鈥?/div>
50
6.0
鈥?/div>
pF
MHz
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.
2. Pulse Test: Pulse Width
鈮?/div>
300
碌s;
Duty Cycle = 2.0%.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 3
漏
Motorola, Inc. 1998
Motorola Small鈥揝ignal Transistors, FETs and Diodes Device Data
1
PZTA92T1 產(chǎn)品屬性
10
分離式半導(dǎo)體產(chǎn)品
晶體管(BJT) - 單路
-
PNP
50mA
300V
500mV @ 2mA，20mA
-
40 @ 30mA，10V
1.5W
50MHz
表面貼裝
TO-261-4，TO-261AA
SOT-223
Digi-Reel®
PZTA92T1OSDKR
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