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PZTA64T1 Datasheet

  • PZTA64T1

  • PNP SILICON DARLINGTON TRANSISTOR SURFACE MOUNT

  • 6頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by PZTA64T1/D
PNP Small Signal
Darlington Transistor
This PNP small-signal darlington transistor is designed for use in preamplifiers
input applications or wherever it is necessary to have a high input impedance.
The device is housed in the SOT-223 package which is designed for medium
power surface mount applications.
鈥?/div>
High fT : 125 MHz Minimum
鈥?/div>
The SOT-223 Package can be soldered using wave or reflow.
鈥?/div>
SOT-223 package ensures level mounting, resulting in improved thermal
conduction, and allows visual inspection of soldered joints. The formed
leads absorb thermal stress during soldering eliminating the possibility of
damage to the die.
鈥?/div>
Available in 12 mm Tape and Reel
Use PZTA64T1 to order the 7 inch/1000 unit reel.
Use PZTA64T3 to order the 13 inch/4000 unit reel.
鈥?/div>
NPN Complement is PZTA14T1
COLLECTOR 2, 4
PZTA64T1
Motorola Preferred Device
SOT-223 PACKAGE
PNP SILICON
DARLINGTON
TRANSISTOR
SURFACE MOUNT
4
1
BASE
1
2
3
EMITTER 3
CASE 318E-04, STYLE 1
TO-261AA
MAXIMUM RATINGS
(TC = 25擄C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Total Power Dissipation @ TA = 25擄C(1)
Collector Current
Operating and Storage Temperature Range
Symbol
VCES
VCBO
VEBO
PD
IC
TJ, Tstg
Value
30
30
10
1.5
500
鈥?65 to +150
Unit
Vdc
Vdc
Vdc
Watts
mAdc
擄C
DEVICE MARKING
P2V
THERMAL CHARACTERISTICS
Thermal Resistance from Junction to Ambient (surface mounted)
Maximum Temperature for Soldering Purposes
Time in Solder Bath
R
胃JA
TL
83.3
260
10
擄C/W
擄C
Sec
1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 4
Motorola Small鈥揝ignal
漏
Motorola, Inc. 1996
Transistors, FETs and Diodes Device Data
1

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