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PZTA55 Datasheet

  • PZTA55

  • PNP General Purpose Amplifier

  • 2026.22KB

  • 13頁

  • FAIRCHILD

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MPSA55 / MMBTA55 / PZTA55
MPSA55
MMBTA55
C
PZTA55
C
E
C
B
TO-92
E
SOT-23
Mark: 2H
B
SOT-223
B
C
E
PNP General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 73. See
MPSA56 for characteristics.
Absolute Maximum Ratings*
Symbol
V
CES
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25擄C unless otherwise noted
Parameter
Collector-Emitter Voltage
Value
60
60
4.0
500
-55 to +150
Units
V
V
V
mA
擄C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
胃JC
R
胃JA
TA = 25擄C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MPSA55
625
5.0
83.3
200
Max
*MMBTA55
350
2.8
357
**PZTA55
1,000
8.0
125
Units
mW
mW/擄C
擄C/W
擄C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
茫
1997 Fairchild Semiconductor Corporation
MPSA55/MMBTA55/PZTA55, Rev A

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