MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by PZTA42T1/D
High Voltage Transistor
Surface Mount
NPN Silicon
COLLECTOR 2,4
BASE
1
EMITTER 3
PZTA42T1
Motorola Preferred Device
SOT鈥?23 PACKAGE
NPN SILICON
HIGH VOLTAGE
TRANSISTOR
SURFACE MOUNT
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage (Open Base)
Collector-Base Voltage (Open Emitter)
Emitter-Base Voltage (Open Collector)
Collector Current (DC)
Total Power Dissipation @ TA = 25擄C(1)
Storage Temperature Range
Junction Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Value
300
300
6.0
500
1.5
鈥?65 to +150
150
Unit
Vdc
Vdc
Vdc
mAdc
Watts
擄C
擄C
1
2
3
4
CASE 318E-04, STYLE 1
TO-261AA
DEVICE MARKING
P1D
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction-to-Ambient(1)
Symbol
R
胃JA
Max
83.3
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TA = 25擄C unless otherwise noted)
Characteristics
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2)
(IC = 1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC = 100
碌Adc,
IE = 0)
Emitter-Base Breakdown Voltage
(IE = 100
碌Adc,
IC = 0)
Collector-Base Cutoff Current
(VCB = 200 Vdc, IE = 0)
Emitter-Base Cutoff Current
(VBE = 6.0 Vdc, IC = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
300
300
6.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.1
0.1
Vdc
Vdc
Vdc
碌Adc
碌Adc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min 0.93 in2.
2. Pulse Test Conditions, tp = 300
碌s, 未
= 0.02.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a trademark of the Bergquist Company
REV 3
Motorola Small鈥揝ignal
漏
Motorola, Inc. 1998
Transistors, FETs and Diodes Device Data
1
PZTA42T1 產(chǎn)品屬性
10
分離式半導體產(chǎn)品
晶體管(BJT) - 單路
-
NPN
50mA
300V
500mV @ 2mA，20mA
-
40 @ 30mA，10V
1.5W
50MHz
表面貼裝
TO-261-4，TO-261AA
SOT-223
Digi-Reel®
PZTA42T1OSDKR
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