PZTA29 NPN Darlington Transistor
PZTA29
NPN Darlington Transistor
鈥?This device designed for applications requiring extremely high
current gain at collector currents to 500mA.
鈥?Sourced from process 03.
4
3
2
1
SOT-223
1. Base 2.4. Collector 3. Emitter
Absolute Maximum Ratings *
T
Symbol
V
CES
V
CBO
V
EBO
I
C
T
J
, T
STG
NOTES:
a
= 25擄C unless otherwise noted
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Value
100
100
12
800
-55 to +150
Units
V
V
V
mA
擄C
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady limits. The factory should be consulted on application involving pulsed or low duty cycle operations
Electrical Characteristics
Symbol
Off Characteristics
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CES
I
EBO
T
a
= 25擄C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cut-off Current
Conditions
I
C
= 100碌A(chǔ), V
BE
= 0
I
C
= 100碌A(chǔ), I
E
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CB
= 80V, I
E
= 0
V
CE
= 80V, V
BE
= 0
V
EB
= 10V, I
C
= 0
Min.
100
100
12
Max
Units
V
V
V
100
500
100
nA
nA
nA
On Characteristics
h
FE
V
CE(sat)
V
BE(on)
f
T
C
obo
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
V
CE
= 5.0V, I
C
= 10mA
V
CE
= 5.0V, I
C
= 100mA
I
C
= 10mA, I
B
= 0.01mA
I
C
= 100mA, I
B
= 0.1mA
I
C
= 100mA, V
CE
= 5.0V
I
C
= 10mA, V
CE
= 5.0V, f = 100MHz
V
CB
= 1.0V, I
E
= 0, f = 1.0MHz
125
8.0
10,000
10,000
1.2
1.5
2.0
V
V
V
Small Signal characteristics
Current Gain Bandwidth Product
Output Capacitance
MHz
pF
* Pulse Test: Pulse Width
鈮?/div>
300碌s, Duty Cycle
鈮?/div>
2.0%
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
PZTA29 Rev. A
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2
3
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