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PZT951

PNP Silicon Planar High Current Transistor

P b

Lead(Pb)-Free

BASE

1

3

EM ITTER

COLLECTOR

2, 4

SOT-223

1. BASE

2.COLLECTOR

3.EMITTER

4.COLLECTOR

4

1

2

3

ABSOLUTE MAXIMUM RATINGS (T

A

=25 C)

Rating

Collector to Base Voltage

Collector to Emitter Voltage

Collector to Base Voltage

Collector Current

Collector Current

Total Device Disspation T

A

=25擄C

Junction Temperature

Storage, Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

(DC)

I

C

(Pulse)

P

D

Tj

Tstg

Value

-100

-60

-6

-5

-15

3

+150

-55 to +150

Unit

V

V

V

A

A

W

藲C

藲C

*Device mounted in a typical manner on a P.C.B with copper 4 inches x 4 inches(min).

Device Marking

PZT951=PZT951

ELECTRICAL CHARACTERISTICS

Characteristics

Collector-Base Breakdown Voltage

I

C

=-100碌A(chǔ), I

E

=0

Collector-Emitter Breakdown Voltage

I

C

=-1碌A(chǔ), R

B

鈮?k惟

Collector-Emitter Breakdown Voltage

(1)

I

C

=-10mA, I

B

=0

Emitter-Base Breakdown Voltage

I

E

=-100碌A(chǔ), I

C

=0

Collector Cut-O鏗€ Current

V

CB

=-80V, I

E

=0

Collector Cut-O鏗€ Current

V

CB

=-80V, R鈮?k惟

Emitter-Cut-O鏗€ Current

V

EB

=-6V, I

C

=0

Symbol

BV

CBO

BV

CER

BV

CEO

BV

EBO

I

CBO

I

CER

I

EBO

Min

-100

-100

-60

-6

-

-

-

Max

-

-

-

-

-

-

-

Max

-

-

-

-

-50

-50

-10

Unit

V

V

V

V

nA

nA

nA

WEITRON

http://www.weitron.com.tw

1/4

Rev.A 13-Jan-06

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• PZT951
  英文版
  PNP Silicon Planar High Current Transistor
  
  PZT951
• PZT951
  英文版
  PNP Silicon Planar High Current Transistor
  WEITRON [Weitro...
  PZT951

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