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PZT2907AT3 Datasheet

  • PZT2907AT3

  • TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 600MA I(C) | TO-261A...

  • 8頁(yè)

  • ETC

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ON Semiconductort
PNP Silicon
Epitaxial Transistor
This PNP Silicon Epitaxial transistor is designed for use in linear
and switching applications. The device is housed in the SOT-223
package which is designed for medium power surface mount
applications.
鈥?/div>
NPN Complement is PZT2222AT1
鈥?/div>
The SOT-223 package can be soldered using wave or reflow
鈥?/div>
SOT-223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering eliminating
the possibility of damage to the die.
BASE 1
鈥?/div>
Available in 12 mm tape and reel
Use PZT2907AT1 to order the 7 inch/1000 unit reel.
Use PZT2907AT3 to order the 13 inch/4000 unit reel.
MAXIMUM RATINGS
(T
C
= 25擄C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
A
= 25擄C
(1)
Derate above 25擄C
Operating and Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
J
, T
stg
PZT2907AT1
ON Semiconductor Preferred Device
SOT-223 PACKAGE
PNP SILICON
TRANSISTOR
SURFACE MOUNT
COLLECTOR
2,4
1
2
3
4
3
EMITTER
CASE 318E-04, STYLE 1
TO-261AA
Value
鈥?0
鈥?0
鈥?.0
鈥?00
1.5
12
鈥?5 to 150
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/擄C
擄C
THERMAL CHARACTERISTICS
Thermal Resistance 鈥?Junction-to-Ambient (surface mounted)
Lead Temperature for Soldering, 0.0625鈥?from case
Time in Solder Bath
R
胃JA
T
L
83.3
260
10
擄C/W
擄C
Sec
DEVICE MARKING
P2F
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (I
C
= 鈥?0
碌A(chǔ)dc,
I
E
= 0)
Collector-Emitter Breakdown Voltage (I
C
= 10 mAdc, I
B
= 0)
Emitter-Base Breakdown Voltage (I
E
= 鈥?0
碌A(chǔ)dc,
I
C
= 0)
Collector-Base Cutoff Current (V
CB
= 鈥?0 Vdc, I
E
= 0)
Collector-Emitter Cutoff Current (V
CE
= 鈥?0 Vdc, V
BE
= 0.5 Vdc)
Base-Emitter Cutoff Current (V
CE
= 鈥?0 Vdc, V
BE
= 鈥?.5 Vdc)
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
BEX
鈥?0
鈥?0
鈥?.0
鈥?/div>
鈥?/div>
鈥?/div>
擄鈥斅?/div>
鈥?/div>
擄鈥斅?/div>
擄鈥斅?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?0
鈥?0
鈥?0
Vdc
Vdc
Vdc
nAdc
nAdc
nAdc
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2001
1
March, 2001 鈥?Rev. 5
Publication Order Number:
PZT2907AT1/D

PZT2907AT3 產(chǎn)品屬性

  • 4,000

  • 分離式半導(dǎo)體產(chǎn)品

  • 晶體管(BJT) - 單路

  • -

  • PNP

  • 600mA

  • 60V

  • 1.6V @ 50mA,500mA

  • -

  • 100 @ 150mA,10V

  • 1.5W

  • 200MHz

  • 表面貼裝

  • TO-261-4,TO-261AA

  • SOT-223

  • 帶卷 (TR)

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