TENTATIVE
PIM
MODULE
11
KW 200V
PVD110-
PVD110-6
Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber
For 11kw 200V Inverter
MAXMUM RATINGS
(Tc=25擄C)
Item
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
3 Phase
Average Rectified Out 鈥揚ut Current
Rectification
Surge Forward Current
Diode
I Squared t
Critical Rate of Fall of Forward Current
Repetitive Peak Off-State Voltage
Non-Repetitive Peak Off-State Voltage
Average Rectified Out-Put Current
Surge Forward Current
I Squared t
Switch
Critical Rate Of Rise Of Turn-On Current
Thyristor
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Peak Gate Reverse Voltage
Collector-Emitter Voltage
Gate-Emitter Voltage
DC
Collector Current
Inverter
1
ms
IGBT
DC
Forward Current
1
ms
Collector Power Dissipation
Collector-Emitter Voltage
Gate Emitter Voltage
Brake
DC
IGBT
Collector Current
1ms
Collector Power Dissipation
Repetitive Peak Reverse Voltage
Snubber
Forward Current, DC
Diode
Surge Forward Current
Operating Junction Temperature Range
Storage Temperature Range
Isolation Voltage(Terminal to Base)
Isolation Resistance(Terminal to Base, @DC=500V)
Mounting Torque(Module Base to Heatsink)
Approximate Weight : 400g
Symbol
V
RRM
V
RSM
I
O(AV)
I
FSM
I
2
t
-di/dt
V
DRM
V
RSM
I
O(AV)
I
TSM
I
2
t
di/dt
P
GM
P
GM(AV)
I
GM
V
GM
V
RGM
V
CES
V
GES
I
C
I
CP
I
F
I
FM
P
C
V
CES
V
GES
I
C
I
CP
P
C
V
RRM
I
F
I
FSM
Tjw
Tstg
Viso
Riso
Ftor
Rated Value
800
900
100
900
4050
160(@ :I
FM
=60A, V
R
=500V)
800
900
100
1000
5000
100
5
1
2
10
5
600
+/- 20V
100
200
100
200
390
600
+/- 20V
50
100
215
600
15
150
-40 to +150擄C(notes:+125
擄C
> Can not be biased.)
-40 to +125擄C
2500(@AC, 1minute), 3000(@AC, 1second)
500
(M4), 1.4
Unit
V
A
A
2
s
A/
碌s
V
A
A
2
s
A/碌s
W
A
V
V
A
W
V
A
W
V
A
擄C
V
M.ohm
N路m
ELECTRICAL CHARACTERISTICS
(Tc=25擄C Unless otherwise noted)
Characteristic
Symbol
Test Condition
3 Phase
Peak Reverse Current *1
Rectification Diode Peak Reverse Voltage *1
Peak OFF-State Current
Peak Reverse Current
Peak On-State Voltage
Gate Current to Trigger
Switch Thyristor
Gate Voltage to Trigger
Gate Voltage to Non-Trigger
Critical Rate Of Rise Of Off-State Voltage
V
GT
V
GD
dv/dt
I
R
V
F
I
DM
I
RM
V
TM
I
GT
Tj=150擄C, V
RM
=V
RRM
I
F
=100A
Tj=125擄C, V
DM
=V
DRM
Tj=125擄C, V
RM
=V
RRM
I
T
=100A
Tj=-40擄C
V
D
=6V
Tj=25擄C
I
T
=1A
Tj=125擄C
Tj=-40擄C
V
D
=6V
Tj=25擄C
I
T
=1A
Tj=125擄C
Tj=125擄C, V
D
=2/3V
DRM
Min.
-
-
-
-
-
-
-
-
-
-
-
0.25
500
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
10
1.50
50
50
1.50
200
100
50
40
25
20
-
-
Unit
mA
碌A(chǔ)
mA
V
mA
V
V
V/碌s
1
2
3
