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SBU_f.pub 4-page data sheet
3 dB Bandwidth: DC to 3.0 GHz
9.0 dB Typical Gain @ 1.0 GHz
Unconditionally Stable (k>1)
Cost Effective Ceramic Microstrip Packages
Tape and Reel Packaging Available
Ceramic Microstrip Case Style Outlines
1, 2, 3
Available in short lead version as MA4TD0436.
Description
M/A-COM鈥檚 MA4TD045 and MA4TD0436 are high
performance silicon bipolar MMICs housed in cost effective
ceramic microstrip
packages. The MA4TD0435 and
MA4TD0436 are designed for use where a general purpose 50鈩?/div>
gain block is desired. Typical applications include narrow and
wide band IF and RF amplifiers in industrial and military
applications.
The MA4TD0435 and MA4TD0436 are fabricated using a 10
GHz fT silicon bipolar technology that features gold metalization
and IC passivation for increased performance and reliability.
Typical Power Gain vs. Frequency
-7
CONVERSION LOSS (dB)
-7.5
Notes: (unless otherwise specified)
1. Dimensions are in/mm
2. Tolerance: in .xxx =
鹵.0005;
mm .xx = 鹵.13
3. See last page of data sheet for short lead Micro-X
-8
Pin Configuration
Pin Number
1
2&4
3
Pin Package
RF Input
AC/DC Ground
RF Output and DC Bias
-8.5
-9
700
720
740
760
780
800
820
840
860
880
900
920
940
960
980
1000
RF FREQ (MHz)
Electrical Specifications @ T
A
= +25擄C, I
d
= 50 mA, Z
0
= 50鈩?/div>
=
鈩?/div>
Symbol
Gp
鈭咷p
f
3dB
SWRin
SWRout
P
1dB
NF
IP
3
t
D
Vd
dV/dT
Parameters
Power Gain ( IS
21
I
2
)
Gain Flatness = 0.1 to 2.0 GHz
3 dB Bandwidth
Input SWRf = 0.1 to 2.0GHz
Output SWRf = 0.1 to 2.0GHz
Output Power @ 1 dB Gain Compression
50鈩?Noise Figuref = 1.0 GHz
Third Order Intercept Point
Group Delay f = 1.0 GHz
Device Voltage
Device Voltage Temperature Coefficient
Test Conditions
f = 0.1 GHz
dB
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f = 0.1 GHz
dB
f = 0.1 GHz
ps
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Units
dB
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GHz
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dBm
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dBm
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V
mV/擄C
Min.
7.5
鹵
0.5
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1.5
1.6
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6.2
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125
4.75
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Typ.
9.0
鹵
1.0
3.0
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12.5
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25.5
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5.25
-8.0
Max.
9.5
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5.75
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978-442-4866 wingding / ariel
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