鈻?/div>
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Symbol
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
f
T
Conditions
I
C
=
25 mA, I
B
=
0
V
CB
=
80 V, I
E
=
0
V
CE
=
40 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
V
CE
=
4 V, I
C
=
0.5 A
I
C
=
2 A, I
B
=
0.05 A
V
CE
=
12 V, I
C
=
0.2 A, f
=
10 MHz
50
500
Min
60
100
100
100
2 500
1.0
Typ
Max
Unit
V
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
錚?/div>
V
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
鈻?/div>
Internal Connection
3
2
1
4
5
6
8
7
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2003
SJK00007AED
1
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