Power Transistor Arrays (F-MOS FETs)
PU7457
Silicon N-Channel Power F-MOS FET (with built-in zener diode)
s
Features
q
High avalanche energy capacity
q
High electrostatic breakdown voltage
q
No secondary breakdown
q
High breakdown voltage, large allowable power dissipation
q
Allowing Low-voltage drive
25.3鹵0.2
1.65鹵0.2
9.5鹵0.2
8.0
unit: mm
4.0鹵0.2
s
Applications
q
Contactless relay
q
Diving circuit for a solenoid
q
Driving circuit for a motor
q
Control equipment
q
Switching power supply
4.4鹵0.5
0.5鹵0.15
1.0鹵0.25
2.54鹵0.2
9!2.54=22.86鹵0.25
0.8鹵0.25
0.5鹵0.15
C1.5鹵0.5
s
Absolute Maximum Ratings
(T
C
= 25擄C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
*
1
2
3
4
5
6
7
8
9 10
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
100 鹵 15
鹵20
鹵3
鹵9
22.5
15
3.5
150
鈭?5
to +150
Unit
V
V
A
A
mJ
W
擄C
擄C
1
10
2
3
5
7
9
DC
Pulse
Non repetition
T
C
= 25擄C
Ta = 25擄C
G: Gate
D: Drain
S: Source
10-Lead Plastic SIL Package
Internal Connection
4
6
8
L = 5mH, I
L
= 3A, 1 pulse
s
Electrical Characteristics
(T
C
= 25擄C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)1
R
DS(on)2
| Y
fs
|
V
DSF
C
oss
t
on
t
f
t
d(off)
Conditions
V
DS
= 80V, V
GS
= 0
V
GS
= 鹵20V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 10V, I
D
= 1mA
V
GS
= 10V, I
D
= 2A
V
GS
= 4V, I
D
= 2A
V
DS
= 10V, I
D
= 2A
I
DR
= 3A, V
GS
= 0
130
V
DS
= 10V, V
GS
= 0, f = 1MHz
160
25
V
GS
= 10V, I
D
= 2A
V
DD
= 50V, R
L
= 25鈩?/div>
0.2
0.3
1.5
2.5
85
1
300
400
4
鈭?.6
min
typ
max
10
鹵10
115
2.5
450
600
Unit
碌A
碌A
V
V
m鈩?/div>
m鈩?/div>
S
V
pF
pF
pF
碌s
碌s
碌s
Input capacitance (Common Source) C
iss
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source) C
rss
Turn-on time
Fall time
Turn-off time (delay time)
1
1
2
3
