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an

AMP

company

Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty

Pti3134-9L

3.1 - 3.4 GHz

Features

NPN Silicon Microwave Power Transistor

Common Base Configuration

Broadband Class C Operation

High Efficiency InterdigitatedGeometry

Diffused Emitter Ballasting Resistors

Gold Metalization System

Internal Input Impedance Matching

Hermetic鈥楳etaVCeramic

Package

.093=.013

:2.29L.25>

7

3goF

:2.29i.25>

Absolute Maximum Ratings at 25擄C

i

.mt.010

.004z.001

1

(1.52)

INCHES

<MILLIMETERS

~005

t23MM,

LlNLCSS

0THTRWISE

NOTZD.

TG鈥橪CRANCES

ARE

Electrical Characteristics

at 25擄C

Broadband Test Fixture Impedances

F(GHz)

3.10

3.25

3.40

Z,,(Q)

17.5

15.0

13.0

- j8.5

- j8.2

- j8.0

z&v

90.0

58.0

36.0

+ j37.0

+ j7.0

+j14.5

Specifications

Subject

to Change

Without

Notice.

next

PTI3134-9L相關(guān)型號(hào)PDF文件下載

• 型號(hào)
  版本
  描述
  廠商
  下載
• PTI3134-9L
  英文版
  Radar Pulsed Power Transistor, SW, 300ms Pulse, 10% Duty 3.1...
  MA-COM
  PTI3134-9L
• PTI3134-9L
  英文版
  Radar Pulsed Power Transistor, SW, 300ms Pulse, 10% Duty 3.1...
  MACOM [Tyc...
  PTI3134-9L

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