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PTF191601E Datasheet

  • PTF191601E

  • LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz

  • 61.90KB

  • 4頁

  • INFINEON   INFINEON

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Advance Information
PTF191601
LDMOS RF Power Field Effect Transistor
160 W, 1930 鈥?1990 MHz
Description
The PTF191601 is a 160 W, internally matched
GOLDMOS
FET intended
for GSM and EDGE applications in the 1930 to 1990 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
Features
鈥?/div>
鈥?/div>
Broadband internal matching
Typical EDGE performance
- Average output power = 62 W
- Gain = 14 dB
- Efficiency = 32%
- EVM = 1.7%
Typical CW performance
- Output power at P鈥?dB = 180 W
- Gain = 13 dB
- Efficiency = 47%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
160 W (CW) output power
Typical EDGE EVM Performance
V
DD
= 28 V, I
DQ
= 2.2 A, f = 1989.1 MHz
鈥?/div>
4
40
35
3
30
25
2
Efficiency
EVM
20
15
1
10
5
0
30
35
40
45
50
55
0
EVM RMS (average %)
.
Drain Efficiency (%)
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Output Power (dBm)
PTF191601E
Package 30260
ESD:
Electrostatic discharge sensitive device鈥攐bserve handling precautions!
RF Characteristics
at T
CASE
= 25擄C unless otherwise indicated
EDGE Measurements
(not subject to production test鈥攙erified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 2.2 A, P
OUT
= 62 W, f = 1989.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
Drain Efficiency
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
Min
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
1.7
鈥?0
鈥?3
14
32
Max
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Units
%
dBc
dBc
dB
%
畏
D
Two鈥揟one Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 2.2 A, P
OUT
= 160 W PEP, f = 1990 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Developmental Data Sheet
1 of 4
Symbol
G
ps
Min
鈥?/div>
鈥?/div>
鈥?/div>
Typ
14
36
鈥?0
Max
鈥?/div>
鈥?/div>
鈥?/div>
Units
dB
%
dBc
2004-03-17
畏
D
IMD

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