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PTF180901F Datasheet

  • PTF180901F

  • GSM/EDGE RF Power FET

  • 2頁(yè)

  • INFINEON   INFINEON

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Product Brief
PTF180901
GSM/EDGE RF Power FET
The PTF180901
One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901
is optimized for the DCS and PCS bands. This device operates at 47%
efficiency with 13.5 dB of gain and produces 115 W,
P
-1dB
. This high-gain
high-efficiency device is ideal to power your amplifier design.
A laterally diffused single-ended GOLDMOS
廬
FET, it incorporates full
gold metallization and integrated ESD protection to ensure excellent
lifetime and reliability.
Performance
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Features
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Optimized for bandwidths 1805 MHz 鈥?1880 MHz and
1930 MHz 鈥?1990 MHz
Improved ruggedness
Broadband internal matching
Full gold metallization
Integrated ESD protection: Human Body Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power
Typical EDGE performance
鈥?Average output power = 35 W
鈥?Gain = 14.5 dB
鈥?Efficiency = 32%
鈥?EVM = 1.7% AVG
鈥?ACPR @ 400 KHz = -60 dBc
鈥?ACPR @ 600 KHz = -74 dBc
Typical two-tone performance
鈥?Output power = 90 W PEP
鈥?Gain = 15 dB
鈥?Efficiency = 36%
鈥?IM3 = -30 dBc
鈥?1 MHz tone spacing
Ty p e L ist
Type
PTF180901E
PTF180901F
Output Power
90 W
90 W
Gain
15 dB
15 dB
Supply Voltage Package Type
28 V
28 V
Thermally enhanced
Package
30248
Thermally enhanced, 31248
earless
www.infineon.com/wireless
Wireless Communication
N e v e r
s t o p
t h i n k i n g .

PTF180901F相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    Relay Socket DIN Rail
  • 英文版
    Relay Socket DIN Rail
  • 英文版
    Relay Socket DIN Rail
  • 英文版
    35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
    ERICSSON
  • 英文版
    35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
    ERICSSON [...
  • 英文版
    85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor
    ERICSSON
  • 英文版
    85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor
    ERICSSON [...
  • 英文版
    50 Watts, 300-960 MHz GOLDMOS Field Effect Transistor
    ERICSSON
  • 英文版
    50 Watts, 300-960 MHz GOLDMOS Field Effect Transistor
    ERICSSON [...
  • 英文版
    70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
    ERICSSON
  • 英文版
    70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
    ERICSSON [...
  • 英文版
    125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
    ERICSSON
  • 英文版
    125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
    ERICSSON [...
  • 英文版
    30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor
    ERICSSON
  • 英文版
    30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor
    ERICSSON [...
  • 英文版
    50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
    ERICSSON
  • 英文版
    50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
    ERICSSON [...
  • 英文版
    85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
    ERICSSON
  • 英文版
    85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
    ERICSSON [...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | SOT-391BVAR
    ETC

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