鈥?/div>
INTERNALLY MATCHED
Typical WCDMA Performance
- Average Output Power = 4.5 Watts
- Gain = 16 dB
- Efficiency = 20%
(Channel Bandwidth 3.84 MHz)
Typical CW Performance
- Output Power at P-1dB = 34 Watts
- Gain = 15 dB
- Efficiency = 47%
Full Gold Metallization
Integrated ESD Protection; Class 1
(minimum) Human Body Model
Excellent Thermal Stability
Broadband Internal Matching
Low HCI Drift
Capable of Handling 10:1 VSWR @ 28 V,
30 Watts (CW) Output Power
PTF
1020
15
鈥?/div>
Typical Single Carrier WCDMA Performance
24
Efficiency (%) & Gain (dB)
20
16
12
8
4
0
1.0
V
DS
= 28 V
I
DQ
= 380 mA, f
C
= 2170 MHz
Gain
-15
-25
鈥?/div>
鈥?/div>
ACPR (dB)
-35
Efficiency
ACPR
1
(f
C
+ 5 MHz)
-45
-55
-65
5.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
2.0
3.0
4.0
Output Power (Watts)
Package 20265
Guaranteed Performance
WCDMA Measurements
(in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 380 mA, P
OUT
= 4.5 W
f = 2170 MHz, Single Carrier 3GPP Channel Bandwidth 3.84 MHz, Adj Channels 鹵 5 MHz, Peak to Avg 8.5:1
Characteristic
Adjacent Channel Power Ratio
Gain
Drain Efficiency
Symbol
ACPR
G
ps
h
D
Min
鈥?/div>
14.5
鈥?/div>
Typ
-46
16
20
Max
-42
鈥?/div>
鈥?/div>
Units
dB
dB
%
Two-Tone Measurements
(in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 380 mA, P
OUT
= 30 W PEP, f
c
= 2170 MHz, Tone Spacing = 100 kHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
All published data at T
CASE
= 25擄C unless otherwise indicated.
Data Sheet Rev. A
1
Symbol
G
ps
h
D
IMD
Min
14
鈥?/div>
鈥?/div>
Typ
15
39
-32
Max
鈥?/div>
鈥?/div>
-28
Units
dB
%
dBc
2002-10-08
PTF102015相關型號PDF文件下載
-
型號
版本
描述
廠商
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TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | SOT-391BVAR
ETC
1
2
3
4
5
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