鈥?/div>
INTERNALLY MATCHED
Typical WCDMA Performance at 28 V
- Average Output Power = 20 Watts
- Gain = 14 dB
- Efficiency = 22%
(channel bandwidth 3.84 MHz,
adjacent channels 鹵5 MHz,
peak/avg 8.5:1 at 0.01% CCD)
Typical CW Performance at 28 V
- Output Power at P1-dB = 120 Watts
- Gain = 13 dB
- Efficiency = 48%
Full Gold Metallization
Integrated ESD Protection; Class 1
(minimum) Human Body Model
Excellent Thermal Stability
Broadband Internal Matching
Low HCI Drift
Capable of Handling 10:1 VSWR @ 28 V,
120 Watts (CW) Output Power
Package 20275
PTF
1020
03
Typical Single Carrier WCDMA Performance
-35
Efficiency
-40
20
Gain
15
10
ACPR
V
DD
= 28 V
I
DQ
= 1.45 A
f = 2170 MHz
15
20
25
5
0
25
-45
-50
-55
-60
0
Gain (dB) & Efficiency (%)
鈥?/div>
ACPR (dBc)x
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
5
10
Output Power (Watts)
Guaranteed Performance
WCDMA Measurements
(in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1.45 A, P
OUT
= 20 W AVG
f = 2170 MHz, Single Carrier 3GPP Channel Bandwidth 3.84 MHz, Adj Channels 鹵 5 MHz, Peak to Avg 8.5:1
Characteristic
Adjacent Channel Power Ratio
Gain
Drain Efficiency
Symbol
ACPR
G
ps
h
D
Min
鈥?/div>
13
19
Typ
-45
14.5
22
Max
-40
鈥?/div>
鈥?/div>
Units
dB
dB
%
Two-Tone Measurements
(in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1.20 A, P
OUT
= 120 W PEP, f = 2170 MHz, Tone Spacing = 100 kHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
All published data at T
CASE
= 25擄C unless otherwise indicated.
Data Sheet Rev. A
1
Symbol
G
ps
h
D
IMD
Min
12.5
31
-27
Typ
14
36
-30
Max
鈥?/div>
鈥?/div>
鈥?/div>
Units
dB
%
dBc
2002-10-08
PTF102003 產(chǎn)品屬性
TriQuint
射頻放大器
1063872
PTF102003相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
Relay Socket DIN Rail
-
英文版
Relay Socket DIN Rail
-
英文版
Relay Socket DIN Rail
-
英文版
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
ERICSSON
-
英文版
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
ERICSSON [...
-
英文版
85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor
ERICSSON
-
英文版
85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor
ERICSSON [...
-
英文版
50 Watts, 300-960 MHz GOLDMOS Field Effect Transistor
ERICSSON
-
英文版
50 Watts, 300-960 MHz GOLDMOS Field Effect Transistor
ERICSSON [...
-
英文版
70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
ERICSSON
-
英文版
70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
ERICSSON [...
-
英文版
125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
ERICSSON
-
英文版
125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
ERICSSON [...
-
英文版
30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor
ERICSSON
-
英文版
30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor
ERICSSON [...
-
英文版
50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
ERICSSON
-
英文版
50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
ERICSSON [...
-
英文版
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
ERICSSON
-
英文版
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
ERICSSON [...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | SOT-391BVAR
ETC
1
2
3
4
5
6
