鈥?/div>
INTERNALLY MATCHED
Performance at 1.5 GHz, 28 V
- Output Power = 135 Watts Min
- Power Gain = 12.5 dB Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% Lot Traceability
Typical Output Power vs. Input Power
200
180
Output Power (Watts)
160
140
120
100
80
60
40
20
0
0
3
6
9
12
15
A-12
101
3456
25
9
V
DD
= 28 V
I
DQ
= 1.3 A Total
f = 1500 MHz
935
Input Power (Watts)
Package 20250
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 1.3 A Total,
f = 1.50, 1.55 GHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 1.3 A Total, f = 1.50, 1.55 GHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 135 W, I
DQ
= 1.3 A Total, f = 1.5 GHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 67.5 W, I
= 1.3 A Total, f = 1.5 GHz
鈥攁ll phase angles at frequency of test)
All published data at T
CASE
= 25擄C unless otherwise indicated.
Symbol
G
ps
Min
11.5
Typ
12.5
Max
鈥?/div>
Units
dB
P-1dB
h
D
Y
135
35
PTF10125相關型號PDF文件下載
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描述
廠商
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TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | SOT-391BVAR
ETC
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3
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