鈥?/div>
INTERNALLY MATCHED
Guaranteed Performance at 1.99 GHz, 28 V
- Output Power = 120 Watts Min
- Power Gain = 11 dB Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% Lot Traceability
Typical Output Power vs. Input Power
150
100
Output Power (Watts)
120
Output Power
90
Efficiency
60
80
Efficiency (%)
60
A-12
101
345
698
20
49
40
V
DD
= 28 V
30
I
DQ
= 1.2 A Total
f = 1990 MHz
0
3
6
9
12
15
18
20
0
0
Input Power (Watts)
Package 20250
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 1.2 A Total, f = 1.99 GHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 1.2 A Total, f = 1.99 GHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 120 W, I
DQ
= 1.2 A Total, f = 1.99 GHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 60 W, I
DQ
= 1.2 A Total, f = 1.99 GHz
鈥攁ll phase angles at frequency of test)
All published data at T
CASE
= 25擄C unless otherwise indicated.
Symbol
G
ps
P-1dB
h
D
Y
Min
10
120
鈥?/div>
鈥?/div>
Typ
11
鈥?/div>
40
鈥?/div>
Max
鈥?/div>
鈥?/div>
鈥?/div>
10:1
Units
dB
Watts
%
next
PTF10120相關(guān)型號PDF文件下載
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版本
描述
廠商
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TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | SOT-391BVAR
ETC
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