PTF10119 Datasheet

IC型號：
PTF10119
PDF描述：
12 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor
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144.84KB
PDF頁數(shù)：
4頁
芯片廠家：
ERICSSON

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PTF 10119

12 Watts, 2.1鈥?.2 GHz

GOLDMOS

鈩?/div>

Field Effect Transistor

Description

The PTF 10119 is an internally matched, common source, N-channel

enhancement-mode lateral MOSFET intended for WCDMA

applications from 2.1 to 2.2 GHz. It is rated at 12 watts power output.

Nitride surface passivation and gold metallization ensure excellent

device reliability.

鈥?/div>

INTERNALLY MATCHED

Performance at 2.17 GHz, 28 Volts

- Output Power = 12 Watts Min

- Power Gain = 11 dB Typ

- Efficiency = 43% Typ @ P-1dB

Full Gold Metallization

Silicon Nitride Passivated

Back Side Common Source

Excellent Thermal Stability

100% lot traceability

Typical Output Power vs. Input Power

Output Power (Watts)

0.2

0.4

0.6

0.8

1.2

A-12

1011

3456

0053

= 28 V

= 160 mA

f = 2170 MHz

Input Power (Watts)

Package 20222

Maximum Ratings

Parameter

Drain-Source Voltage

Gate-Source Voltage

Operating Junction Temperature

Total Device Dissipation at Tflange = 25擄C

Above 25擄C derate by

Storage Temperature Range

Thermal Resistance (Tflange = 70擄C)

Symbol

DSS

STG

qJC

Value

鹵20

200

0.31

鈥?0 to +150

3.2

Unit

Vdc

擄C

Watts

W/擄C

擄C

擄C/W

制造商
TriQuint
產(chǎn)品種類
射頻放大器
零件號別名
1063861

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