鈥?/div>
INTERNALLY MATCHED
Guaranteed Performance at 1.93, 1.99 GHz,
28 V
- Output Power = 60 Watts Min
- Power Gain = 12 dB Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% Lot Traceability
Typical Output Power vs. Input Power
80
Output Power (Watts)
60
A-12
40
1011
3456
2
98
37
V
CC
= 28 V
20
I
DQ
= 580 mA
f = 2000 MHz
0
1
2
3
4
5
6
0
Input Power (Watts)
Package 20248
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 28 V, P
OUT
= 15 W, I
DQ
= 580 mA, f = 1.93, 1.99 GHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 580 mA, f = 1.99 GHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 60 W, I
DQ
= 580 mA, f = 1.99 GHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 60 W, I
DQ
= 580 mA, f = 1.99 GHz
鈥攁ll phase angles at frequency of test)
All published data at T
CASE
= 25擄C unless otherwise indicated.
Symbol
G
ps
P-1dB
h
D
Y
Min
11
60
鈥?/div>
鈥?/div>
Typ
12
鈥?/div>
41
鈥?/div>
Max
鈥?/div>
鈥?/div>
鈥?/div>
10:1
Units
dB
Watts
%
next
PTF10112相關(guān)型號(hào)PDF文件下載
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型號(hào)
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TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | SOT-391BVAR
ETC
1
2
3
4
5
6
