鈥?/div>
INTERNALLY MATCHED
Performance at 894 MHz, 28 Volts
- Output Power = 165 Watts
- Power Gain = 13.0 dB Typ
- Drain Efficiency = 50% Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
100% lot traceability
Typical Output Power & Efficiency vs. Input Power
180
60
Efficiency
Output Power (Watts)
Efficiency (%)
140
45
100
30
A-12
3456
9917
1010
0
V
DD
= 28.0 V
60
Output Power
20
0
1
2
3
4
5
6
7
8
0
I
DQ
= 1.8 A Total
f = 880 MHz
15
Input Power (Watts)
Package 20250
Maximum Ratings
Parameter
Drain-Source Voltage
(1)
Gate-Source Voltage
(1)
Operating Junction Temperature
Total Device Dissipation at Tflange = 25擄C
Above 25擄C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70擄C)
(1)
per side
Symbol
V
DSS
V
GS
T
J
P
D
T
STG
R
qJC
Value
65
鹵20
200
500
2.85
鈥?0 to +150
0.35
Unit
Vdc
Vdc
擄C
Watts
W/擄C
擄C
擄C/W
1