鈥?/div>
INTERNALLY MATCHED
Performance at 960 MHz, 28 Volts
- Output Power = 85 Watts
- Power Gain = 12.5 dB Typ
- Efficiency = 55% Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
100% Lot Traceability
Typical Output Power vs. Input Power
100
60
Efficiency (%)
80
Output Pow er
60
40
20
0
0
1
2
3
4
5
6
40
50
Efficiency
Output Power (Watts)
A-1
V
DD
= 28 V
I
DQ
= 800 mA Total
f = 960 MHz
30
20
10
100
234
36
569
74
4
Input Power (Watts)
Package 20240
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 28 V, P
OUT
= 85 W, I
DQ
= 800 mA Total, f = 900 MHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 800 mA Total, f = 900 MHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 85 W, I
DQ
= 800 mA Total, f = 900 MHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 85 W(PEP), I
DQ
= 800 mA Total,
f = 867, 867.1 MHz鈥攁ll phase angles at frequency of test)
All published data at T
CASE
= 25擄C unless otherwise indicated.
G
ps
P-1dB
h
Y
Min
11.0
85
50
鈥?/div>
Typ
12.5
90
55
鈥?/div>
Max
鈥?/div>
鈥?/div>
鈥?/div>
3:1
Units
dB
Watts
%
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PTF10036相關(guān)型號(hào)PDF文件下載
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TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | SOT-391BVAR
ETC
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