鈥?/div>
INTERNALLY MATCHED
Performance at 960 MHz, 28 Volts
- Output Power = 125 Watts
- Power Gain = 12.5 dB Typ
- Efficiency = 55% Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
100% Lot Traceability
Typical Output Power vs. Input Power
150
960 MHz
Output Power (Watts)
125
100
75
860 MHz
50
900 MHz
A-1
100
20
234
569
813
V
DD
= 28 V
25
0
0
1
2
3
4
5
6
7
I
DQ
= 1.4 A Total
Input Power (Watts)
Package 20240
RF Specifications
(100% Tested)
Characteristic
Gain
(V
DD
= 28 V, P
OUT
= 125 W, I
DQ
= 1.4 A Total, f = 960 MHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
CQ
= 1.4 A Total, f = 960 MHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 125 W, I
DQ
= 1.4 A Total, f = 960 MHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 125 W(PEP), I
DQ
= 1.4 A Total,
f = 959.9, 960 MHz鈥攁ll phase angles at frequency of test)
All published data at T
CASE
= 25擄C unless otherwise indicated.
P-1dB
h
Y
125
50
鈥?/div>
130
55
鈥?/div>
鈥?/div>
鈥?/div>
10:1
Watts
%
鈥?/div>
Symbol
G
ps
Min
11.0
Typ
12.5
Max
next
PTF10020相關(guān)型號(hào)PDF文件下載
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型號(hào)
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TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | SOT-391BVAR
ETC
1
2
3
4
5
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