PTB 20239
12 Watts, 1465鈥?513 MHz
Cellular Radio RF Power Transistor
Description
The PTB 20239 is a class AB, NPN, common emitter RF power
transistor intended for 26 Vdc operation from 1465 to 1513 MHz.
Rated at 12 watts minimum output power, it may be used for both CW
and PEP applications. Ion implantation, nitride surface passivation
and gold metallization ensure excellent device reliability. 100% lot
traceability is standard.
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12 Watts, 26 Vdc
Class AB Characteristics
Surface Mountable
Available in Tape and Reel
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
20
Output Power (Watts)
16
12
8
4
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
CC
= 26 V
I
CQ
= 25 mA
f = 1513 MHz
20
23
9
LO
TC
OD
E
Input Power (Watts)
Package 20232
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25擄C
Above 25擄C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70擄C)
T
STG
R
胃JC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
50
50
4
2.0
33
0.189
鈥?0 to +150
5.3
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C/W
1
9/28/98