e
PTB 20216
6 Watts, 1.8鈥?.0 GHz
RF Power Transistor
Description
The 20216 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation across the 1.80 to 2.00 GHz frequency
band. Rated at 6 watts minimum output power, it may be used for
both CW and PEP applications. Ion implantation, nitride surface
passivation and gold metallization are used to ensure excellent device
reliability. 100% lot traceability is standard.
聲
聲
聲
聲
聲
聲
聲
6 Watts, 1.80鈥?.00 GHz
Class AB Characteristics
30% Collector Efficiency at 4 Watts
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
Typical Output Power vs. Input Power
7
Output Power (Watts)
V
CC
= 26 V
6
5
4
3
2
0.0
0.2
0.4
0.6
0.8
I
CQ
= 50 mA
f = 1.8 - 2.0 GHz
202
16
LO
TC
OD
E
Input Power (Watts)
Package 20227
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25擄C
Above 25擄C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70擄C)
T
STG
R
胃JC
Symbol
V
CER
V
CES
V
EBO
I
C
P
D
Value
50
50
4.0
1.0
19.7
0.112
鈥?0 to +150
8.9
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C/W
1
9/28/98
1
2
