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PTB20195 Datasheet

  • PTB20195

  • 150 Watts, 860-900 MHz Cellular Radio RF Power Transistor

  • 51.55KB

  • 3頁

  • ERICSSON

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PTB 20195
150 Watts, 860鈥?00 MHz
Cellular Radio RF Power Transistor
Description
The 20195 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 860 to 900 MHz. Rated at 150
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
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Class AB Characteristics
26 Volt, 900 MHz Characteristics
- Output Power = 150 Watts Min
- Collector Efficiency = 50% Min at 150 Watts
- Gain = 9 dB Typ
Gold Metallization
Silicon Nitride Passivated
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Typical Output Power vs. Input Power
200
Output Power (Watts)
160
120
80
201
95
LOT
COD
E
V
CC
= 26 V
40
0
0
5
10
15
20
25
30
I
CQ
= 400 mA Total
f = 900 MHz
Input Power (Watts)
Package 20224
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25擄C
Above 25擄C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70擄C)
T
STG
R
胃JC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
40
60
4.0
25
330
1.89
鈥?0 to +150
0.53
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C/W
1
9/28/98

PTB20195 產(chǎn)品屬性

  • TriQuint

  • 射頻放大器

  • 1063835

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