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PTB 20190

175 Watts, 470鈥?06 MHz

Digital Television Power Transistor

Description

The 20190 is a class AB, NPN, common emitter RF power transistor

intended for 28 Vdc operation across the 470 to 806 MHz UHF TV

frequency band. Rated at 175 watts output power, it is specifically

intended to operate uncorrected at 125 watts P-Sync (tested to EIA

Standard 4.1.3, Section 5, Method B for class AB transmitters at 125

watts P-sync) or at a minimum of 175 watts in PEP applications. It

may also be operated at comparable power levels for ATV broad-

casting. Ion implantation, nitride surface passivation and gold metalli-

zation ensure excellent device reliability. 100% lot traceability is

standard.

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聲

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175 Watts, 470鈥?06 MHz

Class AB Characteristics

50% Collector Efficiency at 175 Watts

Gold Metallization

Silicon Nitride Passivated

Typical Gain vs. Frequency

10.5

10.0

9.5

Gain (dB)

9.0

8.5

8.0

7.5

470

201

90

LOT

COD

E

V

CC

= 28 V

I

CQ

= 2 x 100 mA

Pout = 175 W

526

582

638

694

750

806

Frequency (MHz)

Package 20224

Maximum Ratings

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage (collector open)

Collector Current (continuous)

Total Device Dissipation at Tflange = 25擄C

Above 25擄C derate by

Storage Temperature Range

Thermal Resistance (Tflange = 70擄C)

T

STG

R

胃JC

Symbol

V

CER

V

CBO

V

EBO

I

C

P

D

Value

40

60

4.0

25.0

330

1.89

鈥?0 to +150

0.53

Unit

Vdc

Vdc

Vdc

Adc

Watts

W/擄C

擄C

擄C/W

1

9/28/98

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