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PTB20189 Datasheet

  • PTB20189

  • UHF TV Linear Power Transistor Cellular Radio RF Power Trans...

  • 3頁(yè)

  • ERICSSON

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PTB 20189
1 Watt, 900鈥?60 MHz
Cellular Radio RF Power Transistor
Description
The 20189 is an NPN, common emitter RF power transistor intended
for 25 Vdc class A or AB operation from 900 to 960 MHz. Rated at 1
watt minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
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25 Volt, 900鈥?60 MHz Characteristics
- Output Power = 1 Watt
- Gain = 12 dB Min at 1 Watt
Class A/AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
Typical Output Power and Efficiency vs. Input Power
2.0
80
V
CC
= 25 V
1.5
Output Power (Watts)
I
CQ
= 175 mA
f = 960 MHz
60
1.0
40
Efficiency (%)
201
89
LO
TC
OD
E
0.5
20
0.0
0.00
0.02
0.04
0.06
0.08
0
0.10
Input Power (Watts)
Package 20227
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25擄C
Above 25擄C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70擄C)
T
STG
R
胃JC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
40
50
4.0
0.5
11
0.063
鈥?0 to +150
16.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C/W
1
9/28/98

PTB20189 產(chǎn)品屬性

  • TriQuint

  • 射頻放大器

  • 1063832

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