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PTB 20180
2.5 Watts, 1.8鈥?.0 GHz
Cellular Radio RF Power Transistor
Description
The 20180 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
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2.5 Watts, 1.8鈥?.0 GHz
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
Typical Output Power vs. Input Power
1.0
Output Power (Watts)
0.8
0.6
0.4
20
18
0
LO
TC
OD
E
V
CC
= 26 V
0.2
0.0
0.00
I
CQ
= 20 mA
f = 2 GHz
0.02
0.04
0.06
0.08
0.10
Input Power (Watts)
Package 20227
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25擄C
Above 25擄C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70擄C)
T
STG
R
胃JC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
50
50
4.0
0.5
10.0
0.057
鈥?0 to +150
17.5
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C/W
1
9/28/98
1
2
