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PTB20176 Datasheet

  • PTB20176

  • 5 Watts, 1.78-1.92 GHz RF Power Transistor

  • 51.59KB

  • 3頁

  • ERICSSON

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PTB 20176
5 Watts, 1.78鈥?.92 GHz
RF Power Transistor
Description
The 20176 is a common emitter RF power transistor intended for 26
Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum
output power, it is specifically designed for class A or AB linear power
amplifier applications. Ion implantation, nitride surface passivation
and gold metallization are used to ensure excellent device reliability.
100% lot traceability is standard.
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26 Volt, 1.85 GHz Characteristics
Class A/AB
Internally Matched
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
10
Output Power (Watts)
8
6
4
201
76
LOT
COD
E
V
CC
= 26 V
2
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
I
CQ
= 30 mA
f = 1850 MHz
Input Power (Watts)
Package 20201
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25擄C
Above 25擄C derate by
Storage Temperature
Thermal Resistance (Tflange = 70擄C)
Symbol
V
CEO
V
CES
V
EBO
I
C
P
D
Tstg
R
胃JC
Value
20
45
4.0
1
21
0.12
150
8.5
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C/W
1
9/28/98

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