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PTB20175 Datasheet

  • PTB20175

  • 55 Watts, 1.9-2.0 GHz Cellular Radio RF Power Transistor

  • 4頁(yè)

  • ERICSSON

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PTB 20175
55 Watts, 1.9鈥?.0 GHz
Cellular Radio RF Power Transistor
Description
The 20175 is a class AB, NPN common emitter RF power transistor
intended for 26 Vdc operation from 1.9 to 2.0 GHz. It is rated at 55
watts minimum output power and may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
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55 Watts, 1.9鈥?.0 GHz
Class AB Characteristics
40% Collector Efficiency at 55 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
70
Output Power (Watts)
60
50
40
30
20
10
2
4
6
8
10
12
14
201
75
LOT
COD
E
V
CC
= 26 V
I
CQ
= 0.150 A
f = 2 GHz
Input Power (Watts)
Package 20223
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25擄 C
Above 25擄C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70擄 C)
Tstg
R
胃JC
Symbol
V
CER
V
CES
V
EBO
I
C
P
D
Value
55
55
4
8
233
1.33
鈥?0 to +150
.75
Unit
Vdc
Vdc
Vdc
Adc
W
W/擄C
擄C
擄C/W
1
9/28/98

PTB20175 產(chǎn)品屬性

  • TriQuint

  • 射頻放大器

  • 1063827

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