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PTB20174 Datasheet

  • PTB20174

  • 90 Watts, 1400-1600 MHz RF Power Transistor

  • 4頁

  • ERICSSON

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PTB 20174
90 Watts, 1400鈥?600 MHz
RF Power Transistor
Description
The 20174 is an NPN, common emitter RF power transistor intended
for 26 Vdc class AB operation from 1400 to 1600 MHz. Rated at 90
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
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Class AB Characteristics
Specified 26 Volts, 1490 MHz
- Output Power = 90 Watts
- IMD at 90 Watts = -28 dBc max.
- Gain at 90 Watts = 7.5 dB min.
Gold Metallization
Silicon Nitride Passivated
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Typical Output Power and Efficiency vs. Input Power
120
90
V
CC
= 26 V
100
80
60
40
20
0
0
5
10
15
20
Output Power (Watts)
I
CQ
= 250 mA Total
f = 1490 MHz
80
70
60
50
40
30
Efficiency (%)
201
74
LOT
COD
E
Input Power (Watts)
Package 20224
Maximum Ratings
Parameter
Collector-Emitter Voltage (collector shorted)
Collector-Base Voltage (emitter open)
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25擄C
Above 25擄C derate by
Storage Temperature
Thermal Resistance (Tflange = 70擄C)
T
STG
R胃
JC
Symbol
V
CES
V
CBO
V
EBO
I
C
P
D
Value
52
50
4.0
15
290
1.67
150
0.6
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C/W
1
9/28/98

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