e
PTB 20167
60 Watts, 850鈥?60 MHz
RF Power Transistor
Description
The 20167 is an NPN, common base RF power transistor intended
for 24 Vdc operation from 850 to 960 MHz. Rated at 60 watts minimum
output power, it is specifically designed for class C power amplifier
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
聲
24 Volt, 905 MHz Common Base Characteristics
- Output Power = 60 W
- Power Gain = 7.0 dB Min
- Efficiency = 60% Min
Double Input/Output Matched for Wideband
Performance
Gold Metallization
Silicon Nitride Passivated
聲
聲
聲
Typical Output Power vs. Input Power
70
Output Power (Watts)
65
60
55
50
45
40
35
30
6
7
8
9
10
11
12
201
67
LO
TC
OD
E
V
CC
= 24 V
f = 905 MHz
Input Power (Watts)
Package 20200
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25擄C
Above 25擄C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70擄C)
T
STG
R
胃JC
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
Value
30
55
4.0
10
175
1
鈥?0 to +150
1
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C/W
1
9/28/98
1
2
3
