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PTB 20162
40 Watts, 470鈥?00 MHz
RF Power Transistor
Description
The 20162 is an NPN common emitter RF power transistor intended
for 25 Vdc class AB operation from 470 to 900 MHz. Rated at 40
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
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40 Watts, 470鈥?00 MHz
Class AB Characteristics
50% Min Collector Efficiency at 40 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power & Efficiency vs. Input Power
60
50
70
60
50
Output Power (Watts)
40
30
20
10
0
0
1
2
3
4
5
6
7
8
201
62
LOT
COD
E
V
CC
= 25 V
I
CQ
= 200 mA
f = 900 MHz
30
20
10
Efficiency
40
Input Power (Watts)
Package 20226
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25擄C
Above 25擄C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70擄C)
T
STG
R
胃JC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
50
50
4.0
10.0
80
0.45
鈥?0 to +150
2.2
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C/W
1
9/28/98
1
2
