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PTB 20156
8 Watts, 1350鈥?850 MHz
Microwave Power Transistor
Description
The 20156 is an NPN, common base RF power transistor intended
for 22 Vdc operation from 1350 to 1850 MHz. Rated at 8 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
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Specified 22 Volts
Class C Characteristics
Output Power: 8 Watts
Gain: 6.0 dB Min. at 8 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Gain & Return Loss vs. Frequency
10
8
Gain (dB)
(as measured in a broadband circuit)
V
CC
= 22 V
Pin = 2.0 W
0
Return Loss (dB)
-3
-6
-9
Gain (dB)
6
4
2
Return Loss (dB)
0
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2015
6
LOT
COD
E
-12
-15
Frequency (GHz)
Package 20209
Maximum Ratings
Parameter
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25擄C
Above 25擄C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70擄C)
T
STG
R
胃JC
Symbol
V
CBO
V
EBO
I
C
P
D
Value
50
4.0
2.0
52
0.29
鈥?0 to +150
3.4
Unit
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C/W
1
9/28/98
1
2
3
