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PTB 20151
45 Watts, 1.8鈥?.0 GHz
PCN/PCS Power Transistor
Description
The 20151 is a class AB, NPN common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts
minimum output power for PEP applications, it is specifically intended
for operation as a final or driver stage in CDMA or TDMA systems.
Ion implantation, nitride surface passivation and gold metallization
ensure excellent device reliability. 100% lot traceability is standard.
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45 Watts, 1.8鈥?.0 GHz
Class AB Characteristics
40% Collector Efficiency at 45 W
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
70
60
50
40
30
20
10
0
0
1
2
3
4
5
6
7
8
9
Output Power (Watts)
201
51
LOT
COD
E
V
CC
= 26 V
I
CQ
= 100 mA
f = 2.0 GHz
Input Power (Watts)
Package 20223
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25擄 C
Above 25擄C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70擄 C)
T
STG
R
胃JC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
50
50
4.0
7.7
200
1.2
鈥?0 to +150
0.85
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C/W
1
9/28/98
1
2
3
4
5
