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PTB 20146
0.4 Watt, 1.8鈥?.0 GHz
Cellular Radio RF Power Transistor
Description
The 20146 is a class A, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
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0.4 Watt, 1.8鈥?.0 GHz
Class A Characteristics
Tested to solderability standards:
- IEC-68-2-54
- ANSI/J Std-002-A
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
Typical Output Power vs. Input Power
1.0
V
CC
= 26 V
Output Power (Watts)
0.8
0.6
0.4
0.2
0.0
0.00
I
CQ
= 140 mA
f = 2.0 GHz
20
14
6
LO
TC
OD
E
0.02
0.04
0.06
0.08
0.10
Input Power (Watts)
Package 20208
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25擄C
Above 25擄C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70擄C)
1
9/28/98
T
STG
R
胃JC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
50
50
4.0
0.5
5.4
0.031
鈥?0 to +150
32.3
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C/W
1
2
