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PTB 20141
18 Watts, 1.465鈥?.513 GHz
Cellular Radio RF Power Transistor
Description
The 20141 is a class AB, NPN, common emitter RF power transistor
intended for 23 Vdc operation from 1.465 to 1.513 GHz. Rated at 18
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
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18 Watts, 1.465鈥?.513 GHz
Class AB Characteristics
45% Min Collector Efficiency at 9 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
30
Output Power (Watts)
25
20
15
10
5
0
0
V
CC
= 23 V
I
CQ
= 50 mA
f = 1.501 GHz
201
41
LOT
COD
E
1
2
3
4
5
Input Power (Watts)
Package 20201
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25擄C
Above 25擄C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70擄C)
T
STG
R
胃JC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
50
50
4.0
2.0
51.5
0.29
鈥?0 to +150
3.5
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C/W
1
9/28/98
1
2
