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PTB20111 Datasheet

  • PTB20111

  • 85 Watts, 860-900 MHz Cellular Radio RF Power Transistor

  • 3頁(yè)

  • ERICSSON

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PTB 20111
85 Watts, 860鈥?00 MHz
Cellular Radio RF Power Transistor
Description
The 20111 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 860 to 900 MHz. Rated at 85
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
聲
25 Volt, 860鈥?00 MHz Characteristics
- Output Power = 85 Watts
- Collector Efficiency = 50% at 85 Watts
- IMD = -30 dBc Max at 60 W(PEP)
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
聲
聲
聲
Typical Output Power vs. Input Power
100
80
60
40
Output Power (Watts)
2011
1
LOT
COD
E
V
CC
= 25 V
20
0
0
4
8
12
16
I
CQ
= 200 mA
f = 900 MHz
Input Power (Watts)
Package 20216
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25擄C
Above 25擄C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70擄C)
T
STG
R
胃JC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
40
65
4.0
20
159
0.91
鈥?0 to +150
1.1
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C/W
1
9/28/98

PTB20111 產(chǎn)品屬性

  • TriQuint

  • 射頻放大器

  • 1063808

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