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PTB 20105
20 Watts, 925鈥?60 MHz
Cellular Radio RF Power Transistor
Description
The 20105 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 925 to 960 MHz. Rated at 20
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
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Class AB Characteristics
Performance at 960 MHz, 25 V
CC
- Output Power = 20 W
- Efficiency = 50% Min
Gold Metallization
Silicon Nitride Passivated
Output Power vs. Input Power
25
Output Power (Watts)
20
15
10
201
05
LOT
COD
E
V
CC
= 25 V
5
0
0
1
2
3
4
I
CQ
= 0.100 A
f = 960 MHz
Input Power (Watts)
Package 20201
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25擄C
Above 25擄C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70擄C)
T
STG
R
胃JC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
40
50
4.0
5.0
70
0.4
鈥?0 to +150
2.5
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C/W
1
9/28/98